PART |
Description |
Maker |
LH28F800BGH-L LH28F800BGR-TL85 LH28F800BGR-TL12 LH |
Aluminum Polymer Radial Lead Capacitor; Capacitance: 1800uF; Voltage: 4V; Case Size: 8x12 mm; Packaging: Bulk 8 M位(512 KB的16)SmartVoltage闪存 RES CURRENT SENSE .025 OHM 1W 1% 8 M位(512 KB的16)SmartVoltage闪存 8 M-bit (512 kB x 16) SmartVoltage Flash Memories 8 M位(512 KB的16)SmartVoltage闪存
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http:// Sharp, Corp. Sharp Corporation Sharp Electrionic Compo...
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AL4CE221 AL4CE211 AL4CE241 |
512, 1K, 2K, 4K, 8K x 9 Advanced Synchronous FIFOs 512,一千,KKK的9高级同步FIFO
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AverLogic Technologies, Inc. AverLogic Technologies, Corp.
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CY7C421-15AXC CY7C421-20VXC |
256/512/1K/2K/4K x 9 Asynchronous FIFO 512 X 9 OTHER FIFO, 15 ns, PQFP32 256/512/1K/2K/4K x 9 Asynchronous FIFO 512 X 9 OTHER FIFO, 20 ns, PDSO28
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Cypress Semiconductor, Corp.
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CY7C429-30PC |
256/512/1K/2K/4K x 9 Asynchronous FIFO(508.06 k) 256/512/1K/2K/4K × 9异步FIFO08.06十一
|
Cypress Semiconductor, Corp.
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IDT72V3642L10PF IDT72V3642L10PQF IDT72V3632 IDT72V |
TV 100C 100#22D SKT PLUG 3.3 VOLT CMOS SyncBiFIFO 256 x 36 x 2 512 x 36 x 2 1,024 x 36 x 2 3.3伏的CMOS SyncBiFIFO 256 × 36 × 2 512 × 36 × 2 1024 × 36 × 2 3.3 VOLT CMOS SyncBiFIFO 256 x 36 x 2 512 x 36 x 2 1,024 x 36 x 2 256 X 36 BI-DIRECTIONAL FIFO, 10 ns, PQFP120 3.3 VOLT CMOS SyncBiFIFO 256 x 36 x 2 512 x 36 x 2 1,024 x 36 x 2 256 X 36 BI-DIRECTIONAL FIFO, 10 ns, PQFP132
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Integrated Device Technology, Inc.
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28C04A-15_L 28C04A-15_P 28C04A-25_L 28C04A-25_P 28 |
512 X 8 EEPROM 5V, 250 ns, PQCC32 4K (512 x 8) CMOS EEPROM
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MICROCHIP[Microchip Technology]
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MS7202AL MS7201AL MS7200L MS7200-25FC MS7201-25FC |
25ns; 256 x 9, 512 x9, 1K x 9 CMOS FIFO 256 X 9 OTHER FIFO, 25 ns, PQCC32 25ns 256 x 9, 512 x9, 1K x 9 CMOS FIFO 256 x 9 CMOS FIFO 256 x 9, 512 x 9, 1K x 9 CMOS FIFO FIFO, Single, 256x9, Uni-directional, 5V Supply, Commercial, LDCC, 32-Pin
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MOSEL-VITELIC Mosel Vitelic, Corp. MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp
|
SRI51211 SRI512 SRI512-SBN18/1GE |
512-bit ISO14443-B contactless memory with 2 binary counters, 5 OTP blocks and anti-collision 13.56 MHz short-range contactless memory chip with 512-bit EEPROM and anticollision functions
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ST Microelectronics STMicroelectronics
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R1LP0408CSP-7LC R1LP0408C-C R1LP0408CSB-5SC R1LP04 |
4M SRAM (512-kword ??8-bit) 4M SRAM (512-kword 8-bit) 4M SRAM (512-kword × 8-bit) 4M SRAM (512-kword 】 8-bit) Memory>Low Power SRAM
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Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
|
63S481ALXXXX 53S481AF883B |
512 X 8 OTPROM, 30 ns, MQCC20 512 X 8 OTPROM, 40 ns, MQFP20
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MONOLITHIC MEMORIES
|
SLE4406SPEC SLE4406SPEMFC3 SLE4406SPEM3 |
512 X 1 EEPROM 5V, UUC 512 X 1 EEPROM 5V, DMA
|
INFINEON TECHNOLOGIES AG
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IDT72V201L20J IDT72V201L20JI IDT72V211L20J IDT72V2 |
512 x 9 SyncFIFO, 3.3V 3.3 VOLT CMOS SyncFIFO 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 3.3 VOLT CMOS SyncFIFO⑩ 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 GT 11C 11#16 SKT RECP BOX RM 3.3 VOLT CMOS SyncFIFO 256 x 9/ 512 x 9/ 1/024 x 9/ 2/048 x 9/ 4/096 x 9 and 8/192 x 9 3.3 VOLT CMOS SyncFIFO256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 3.3伏的CMOS SyncFIFO56 × 912 × 9,024 × 9,048 × 9,096 × 9,192 × 9 GT 6C 3#4 3#16 SKT RECP WALL 1K X 9 OTHER FIFO, 6.5 ns, PQCC32 GT 7C 7#16S PIN RECP 3.3 VOLT CMOS SyncFIFO??256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 GT 8C 8#16 SKT RECP WALL GT 3C 3#16S PIN RECP WALL GT 4C 4#12 PIN PLUG 3.3 VOLT CMOS SyncFIFO?256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9
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IDT[Integrated Device Technology] Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC Integrated Device Techn...
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